C Mocuta: search on Z-Library

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1

A Comparative Cost – Effectiveness Analysis in Different Tested Aquaponic Systems

Petrea, Stefan Mihai, Coadă, Marian Tiberiu, Cristea, Victor, Dediu, Lorena, Cristea, Dragos, Rahoveanu, Adrian Turek, Zugravu, Adrian Gheorghe, Rahoveanu, Maria Magdalena Turek, Mocuta, Dorina Nicole

Journal:

Agriculture and Agricultural Science Procedia

Year:

2016

File:

PDF, 293 KB

2016

2

[IEEE 2019 Symposium on VLSI Technology - Kyoto, Japan (2019.6.9-2019.6.14)] 2019 Symposium on VLSI Technology - Economics of semiconductor scaling - a cost analysis for advanced technology node

Mallik, A., Ryckaert, J., Kim, R-H., Debacker, P., Decoster, S., Lazzarino, F., Ritzenthaler, R., Horiguchi, N., Verkest, D., Mocuta, A.

Year:

2019

Language:

english

File:

PDF, 1.02 MB

english, 2019

3

Low temperature formation and evolution of a 10 nm amorphous Ni–Si layer on [001] silicon studied by in situ transmission electron microscopy

Alberti, Alessandra, Bongiorno, Corrado, Mocuta, Cristian, Metzger, Till, Spinella, Corrado, Rimini, Emanuele

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 1.01 MB

english, 2009

4

Prevalence of Listeria monocytogenes in food, detected by PCR

Stetca, Gheorghe, Mocuta, Nicolae, Chintoanu, Mircea, Miclean, Mirela

Journal:

Current Opinion in Biotechnology

Year:

2013

Language:

english

File:

PDF, 70 KB

english, 2013

5

NanoElectronics Roadmap for Europe:From Nanodevices and Innovative Materials to System Integration

Ahopelto, J., Ardila, G., Baldi, L., Balestra, F., Belot, D., Fagas, G., De Gendt, S., Demarchi, D., Fernandez-Bolaños, M., Holden, D., Ionescu, A.M., Meneghesso, G., Mocuta, A., Pfeffer, M., Popp, R.

Journal:

Solid-State Electronics

Year:

2019

Language:

english

File:

PDF, 1.58 MB

english, 2019

6

Device Exploration of NanoSheet Transistors for Sub-7-nm Technology Node

Jang, Doyoung, Yakimets, Dmitry, Eneman, Geert, Schuddinck, Pieter, Bardon, Marie Garcia, Raghavan, Praveen, Spessot, Alessio, Verkest, Diederik, Mocuta, Anda

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 4.59 MB

english, 2017

7

Salt dissolution potential estimated from two-dimensional vertical thermohaline flow and transport modeling along a Transylvanian salt diapir, Romania; Potentiel de dissolution du sel estimé à partir d’un modèle bidimensionnel d’écoulement thermohalin vertical et de transport le long d’un diapir de sel transylvanien, Roumanie; Potencial de disolución de la sal estimado a partir de la circulación bidimensional de una termohalina vertical y modelos de transporte a lo largo de un diapiro de sal de Transilvania, Rumania; 从罗马尼亚沿特兰西瓦尼亚盐挤入构造二维垂直温盐水流和传输模拟中估算盐分溶解的潜力; Potencial de dissolução de sal estimado a partir do fluxo termohalino vertical bidimensional e de modelagem de transporte ao longo de um diapiro salino na Transilvânia, Romênia; Potenți

Zechner, Eric, Dresmann, Horst, Mocuţa, Marius, Danchiv, Alex, Huggenberger, Peter, Scheidler, Stefan, Wiesmeier, Stefan, Popa, Iulian, Zlibut, Alexandru

Journal:

Hydrogeology Journal

Year:

2019

File:

PDF, 2.38 MB

2019

8

The influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture

Geenen, F. A., Solano, E., Jordan-Sweet, J., Lavoie, C., Mocuta, C., Detavernier, C.

Journal:

Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 3.42 MB

english, 2018

9

[IEEE 2017 IEEE International Interconnect Technology Conference (IITC) - HsinChu, Taiwan (2017.5.16-2017.5.18)] 2017 IEEE International Interconnect Technology Conference (IITC) - Ultralow resistive wrap around contact to scaled FinFET devices by using ALD-Ti contact metal

Chew, S-A., Yu, H., Schaekers, M., Demuynck, S., Mannaert, G., Kunnen, E., Rosseel, E., Hikavyy, A., Dangol, A., Meyer, K. De, Mocuta, D., Horiguchi, N., Leusink, G., Wajda, C., Hakamata, T., Hasegawa

Year:

2017

Language:

english

File:

PDF, 535 KB

english, 2017

10

Double focusing of hard x rays using combined multilayer and Bragg–Fresnel optics

Yasa, M., Li, Y., Mammen, C. B., Als-Nielsen, J., Hoszowska, J., Mocuta, C., Freund, A.

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 426 KB

english, 2004

11

Exceptional preservation requires fast biodegradation: thylacocephalan specimens from La Voulte‐sur‐Rhône (Callovian, Jurassic, France)

Jauvion, Clément, Bernard, Sylvain, Gueriau, Pierre, Mocuta, Cristian, Pont, Sylvain, Benzerara, Karim, Charbonnier, Sylvain, Sansom, Robert

Journal:

Year:

2019

File:

PDF, 8.13 MB

2019

12

Imaging of nanoislands in coherent grazing-incidence small-angle x-ray scattering experiments

Zozulya, A. V., Yefanov, O. M., Vartanyants, I. A., Mundboth, K., Mocuta, C., Metzger, T. H., Stangl, J., Bauer, G., Boeck, T., Schmidbauer, M.

Journal:

Physical Review B

Year:

2008

Language:

english

File:

PDF, 226 KB

english, 2008

13

[IEEE 2015 IEEE Custom Integrated Circuits Conference - CICC 2015 - San Jose, CA, USA (2015.9.28-2015.9.30)] 2015 IEEE Custom Integrated Circuits Conference (CICC) - Holisitic device exploration for 7nm node

Raghavan, P., Bardon, M. Garcia, Jang, D., Schuddinck, P., Yakimets, D., Ryckaert, J., Mercha, A., Horiguchi, N., Collaert, N., Mocuta, A., Mocuta, D., Tokei, Z., Verkest, D., Thean, A., Steegen, A.

Year:

2015

Language:

english

File:

PDF, 995 KB

english, 2015

14

[IEEE 2018 18th International Workshop on Junction Technology (IWJT) - Shanghai (2018.3.8-2018.3.9)] 2018 18th International Workshop on Junction Technology (IWJT) - Titanium (germano-)silicides featuring 10 −9 Ω·cm 2 contact resistivity and improved compatibility to advanced CMOS technology

Yu, Hao, Schaekers, Marc, Chew, Soon Aik, Everaert, Jean-Luc, Dabral, Ashish, Pourtois, Geoffrey, Horiguchi, Naoto, Mocuta, Dan, Collaert, Nadine, De Meyer, Kristin

Year:

2018

Language:

english

File:

PDF, 840 KB

english, 2018

15

[IEEE 2015 International Conference on IC Design & Technology (ICICDT) - Leuven, Belgium (2015.6.1-2015.6.3)] 2015 International Conference on IC Design & Technology (ICICDT) - Modeling FinFET metal gate stack resistance for 14nm node and beyond

Miyaguchi, Kenichi, Parvais, Bertrand, Ragnarsson, Lars-Ake, Wambacq, Piet, Raghavan, Praveen, Mercha, Abdelkarim, Mocuta, Anda, Verkest, Diederik, Thean, Aaron

Year:

2015

Language:

english

File:

PDF, 878 KB

english, 2015

16

[IEEE 2017 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2017.4.2-2017.4.6)] 2017 IEEE International Reliability Physics Symposium (IRPS) - Latchup in bulk FinFET technology

Dai, C.-T., Chen, S.-H., Linten, D., Scholz, M., Hellings, G., Boschke, R., Karp, J., Hart, M., Groeseneken, G., Ker, M.-D., Mocuta, A., Horiguchi, N.

Year:

2017

Language:

english

File:

PDF, 1.03 MB

english, 2017

17

[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - Power aware FinFET and lateral nanosheet FET targeting for 3nm CMOS technology

Yakimets, D., Bardon, M. Garcia, Jang, D., Schuddinck, P., Sherazi, Y., Weckx, P., Miyaguchi, K., Parvais, B., Raghavan, P., Spessot, A., Verkest, D., Mocuta, A.

Year:

2017

Language:

english

File:

PDF, 1.55 MB

english, 2017

18

[IEEE 2017 Symposium on VLSI Technology - Kyoto, Japan (2017.6.5-2017.6.8)] 2017 Symposium on VLSI Technology - Performance and electrostatic improvement by high-pressure anneal on Si-passivated strained Ge pFinFET and gate all around devices with superior NBTI reliability

Arimura, H., Witters, L., Cott, D., Dekkers, H., Loo, R., Mitard, J., Ragnarsson, L.-A., Wostyn, K., Boccardi, G., Chiu, E., Subirats, A., Favia, P., Vancoille, E., De Heyn, V., Mocuta, D., Collaert,

Year:

2017

Language:

english

File:

PDF, 462 KB

english, 2017

19

[IEEE 2002 Symposium on VLSI Technology Digest of Technical Papers - Honolulu, HI, USA (11-13 June 2002)] 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) - Gate postdoping to decouple implant/anneal for gate, source/drain, and extension: maximizing polysilicon gate activation for 0.1 μm CMOS technologies

Park, H., Schepis, D., Mocuta, A.C., Khare, M., Li, Y., Doris, B., Shukla, S., Hughes, T., Dokumaci, O., Narasimha, S., Fung, S., Snare, J., Lee, B.H., Li, J., Ronsheim, P., Domenicucci, A., Varekamp,

Year:

2002

Language:

english

File:

PDF, 293 KB

english, 2002

20

Wide operating window spin-torque majority gate towards large-scale integration of logic circuits

Vaysset, Adrien, Zografos, Odysseas, Manfrini, Mauricio, Mocuta, Dan, Radu, Iuliana P.

Journal:

Year:

2018

Language:

english

File:

PDF, 1.84 MB

english, 2018

21

Deformation modes of nanostructured thin film under controlled biaxial deformation

Djaziri, S., Faurie, D., Le Bourhis, E., Goudeau, Ph., Renault, P.-O., Mocuta, C., Thiaudière, D., Hild, F.

Journal:

Thin Solid Films

Year:

2013

Language:

english

File:

PDF, 710 KB

english, 2013

22

Possibilities of joining galvanized sheet steel using the CMT method (cold metal transfer)

Magda, A., Popescu, M., Codrean, C., Mocuta, E.G.

Journal:

Welding International

Year:

2013

Language:

english

File:

PDF, 204 KB

english, 2013

23

Epitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon

Qiu, Y., Bender, H., Richard, O., Kim, M.-S., Van Besien, E., Vos, I., de Potter de ten Broeck, M., Mocuta, D., Vandervorst, W.

Journal:

Scientific Reports

Year:

2015

Language:

english

File:

PDF, 2.15 MB

english, 2015

24

ESD Protection Diodes in Bulk Si Gate-All-Around Vertically Stacked Horizontal Nanowire Technology

Chen, Shih-Hung, Hellings, Geert, Linten, Dimitri, Mertens, Hans, Mocuta, Anda, Horiguchi, Naoto

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2018

Language:

english

File:

PDF, 1.47 MB

english, 2018

25

Study of uniaxial deformation behavior of 50 nm-thick thin film of gold single crystal using in situ X-ray pole figure measurements

Drieu La Rochelle, J., Godard, P., Mocuta, C., Thiaudière, D., Nicolai, J., Beaufort, M.F., Drouet, M., Renault, P.O.

Journal:

Surface and Coatings Technology

Year:

2019

File:

PDF, 7.19 MB

2019

26

Multiaxial deformation and strain-induced crystallization around a fatigue crack in natural rubber

Rublon, Pierre, Huneau, Bertrand, Verron, Erwan, Saintier, Nicolas, Beurrot, Stéphanie, Leygue, Adrien, Mocuta, Cristian, Thiaudière, Dominique, Berghezan, Daniel

Journal:

Engineering Fracture Mechanics

Year:

2014

Language:

english

File:

PDF, 1.93 MB

english, 2014

27

[IEEE 2002 Symposium on VLSI Technology Digest of Technical Papers - Honolulu, HI, USA (11-13 June 2002)] 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) - Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

Rim, K., Chu, J., Chen, H., Jenkins, K.A., Kanarsky, T., Lee, K., Mocuta, A., Zhu, H., Roy, R., Newbury, J., Ott, J., Petrarca, K., Mooney, P., Lacey, D., Koester, S., Chan, K., Boyd, D., Ieong, M., W

Year:

2002

Language:

english

File:

PDF, 279 KB

english, 2002

28

Fast pole figure acquisition using area detectors at the DiffAbs beamline – Synchrotron SOLEIL

Mocuta, Cristian, Richard, Marie-Ingrid, Fouet, Julie, Stanescu, Stefan, Barbier, Antoine, Guichet, Christophe, Thomas, Olivier, Hustache, Stéphanie, Zozulya, Alexey V., Thiaudière, Dominique

Journal:

Journal of Applied Crystallography

Year:

2013

Language:

english

File:

PDF, 2.18 MB

english, 2013

29

Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom?

Ishikawa, Kenji, Karahashi, Kazuhiro, Ishijima, Tatsuo, Cho, Sung Il, Elliott, Simon, Hausmann, Dennis, Mocuta, Dan, Wilson, Aaron, Kinoshita, Keizo

Journal:

Japanese Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 1.54 MB

english, 2018

30

SPIE Proceedings [SPIE SPIE Advanced Lithography - San Jose, California, United States (Sunday 22 February 2015)] Design-Process-Technology Co-optimization for Manufacturability IX - Layout optimization and trade-off between 193i and EUV-based patterning for SRAM cells to improve performance and process variability at 7nm technology node

Sturtevant, John L., Capodieci, Luigi, Sakhare, Sushil, Trivkovic, Darko, Mountsier, Tom, Kim, Min-Soo, Mocuta, Dan, Ryckaert, Julien, Mercha, Abdelkarim, Verkest, Diederik, Thean, Aaron, Dusa, Mircea

Year:

2015

Language:

english

File:

PDF, 1.76 MB

english, 2015

31

[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - Towards optimal ESD diodes in next generation bulk FinFET and GAA NW technology nodes

Chen, S.-H., Hellings, G., Linten, D., Chiarella, T., Mertens, H., Boschke, R., Mitard, J., Kubicek, S., Ritzenthaler, R., Bury, E., Wang, N., Groeseneken, G., Mocuta, A., Horiguchi, N.

Year:

2017

Language:

english

File:

PDF, 1013 KB

english, 2017

32

[IEEE 2018 IEEE International Interconnect Technology Conference (IITC) - Santa Clara, CA, USA (2018.6.4-2018.6.7)] 2018 IEEE International Interconnect Technology Conference (IITC) - Replacement Metal Contact Using Sacrificial ILD0 for Wrap Around Contact in Scaled FinFET Technology

Chew, S-A., Demuynck, S., Zhang, L., Pacco, A., Devriendt, K., Teugels, L., Hopf, T., Versluijs, J., Vrancken, C., Dangol, A., Altamirano Sanchez, E., Mocuta, D., Horiguchi, N.

Year:

2018

Language:

english

File:

PDF, 2.01 MB

english, 2018

33

[IEEE 2015 International Conference on IC Design & Technology (ICICDT) - Leuven, Belgium (2015.6.1-2015.6.3)] 2015 International Conference on IC Design & Technology (ICICDT) - I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration

Ritzenthaler, R., Schram, T., Cho, M. J., Mocuta, A., Horiguchi, N., Thean, A. V.-Y., Spessot, A., Caillat, C., Aoulaiche, M., Fazan, P., Noh, K. B., Son, Y.

Year:

2015

Language:

english

File:

PDF, 696 KB

english, 2015

34

Exploring Pd–Si(001) and Pd–Si(111) thin-film reactions by simultaneous synchrotron X-ray diffraction and substrate curvature measurements

Richard, M.-I., Fouet, J., Guichet, C., Mocuta, C., Thomas, O.

Journal:

Thin Solid Films

Year:

2013

Language:

english

File:

PDF, 791 KB

english, 2013

35

Exceptional preservation requires fast biodegradation: thylacocephalan specimens from La Voulte‐sur‐Rhône (Callovian, Jurassic, France)

Jauvion, Clément, Bernard, Sylvain, Gueriau, Pierre, Mocuta, Cristian, Pont, Sylvain, Benzerara, Karim, Charbonnier, Sylvain, Sansom, Robert

Journal:

Year:

2019

Language:

english

File:

PDF, 8.13 MB

english, 2019

36

[IEEE 2016 16th International Workshop on Junction Technology (IWJT) - Shanghai, China (2016.5.9-2016.5.10)] 2016 16th International Workshop on Junction Technology (IWJT) - MIS or MS? Source/drain contact scheme evaluation for 7nm Si CMOS technology and beyond

Yu, Hao, Schaekers, Marc, Demuynck, Steven, Barla, Kathy, Mocuta, Anda, Horiguchi, Naoto, Collaert, Nadine, Thean, Aaron Voon-Yew, De Meyer, Kristin

Year:

2016

Language:

english

File:

PDF, 5.91 MB

english, 2016

37

[IEEE 2010 21st Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC) - San Francisco, CA, USA (2010.07.11-2010.07.13)] 2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC) - Device-design metrics to improve manufacturability

Peterson, Kirk, Logan, Ron, Yu, Xiaojun, Dezfulian, Kevin, Bazan, Greg, Winslow, Jon, Zamdmer, Noah, Dubuque, Lenny, Walsh, Brian, Norfleet, Andrew, Clougherty, Fran, Bayat, Ben, Mocuta, Anda, Rim, Ke

Year:

2010

Language:

english

File:

PDF, 303 KB

english, 2010

38

[IEEE 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC) - San Jose, CA, USA (2016.5.23-2016.5.26)] 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC) - Process options to enable (sub-)1e-9 Ohm.cm2 contact resistivity on Si devices

Yu, H., Schaekers, M., Demuynck, S., Rosseel, E., Everaert, J., Chew, S. A., Peter, A., Kubicek, S., Barla, K., Mocuta, A., Horiguchi, N., Collaert, N., Thean, A. V. -Y., De Meyer, K.

Year:

2016

Language:

english

File:

PDF, 854 KB

english, 2016

39

[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - Extreme scaling with ultra-thin Si channel MOSFETs

Doris, B., Meikei Ieong,, Kanarsky, T., Ying Zhang,, Roy, R.A., Dokumaci, O., Zhibin Ren,, Fen-Fen Jamin,, Leathen Shi,, Natzle, W., Hsiang-Jen Huang,, Mezzapelle, J., Mocuta, A., Womack, S., Gr

Year:

2002

Language:

english

File:

PDF, 274 KB

english, 2002

40

[IEEE Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Kyoto, Japan (June 14-16, 2005)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell

Leobandung, E., Nayakama, H., Mocuta, D., Miyamoto, K., Angyal, M., Meer, H.V., McStay, K., Ahsan, I., Allen, S., Azuma, A., Belyansky, M., Bentum, R.-V., Cheng, J., Chidambarrao, D., Dirahoui, B., Fu

Year:

2005

Language:

english

File:

PDF, 1.45 MB

english, 2005

41

How Rural Agricultural Development Projects (Animal Production) can Use Projects Benefits for Improving the Economics States of Farmers

Ibrahim, Mostafa Abdel Rahman, Dorina, Mocuta, Abdelrazek, Ibrahim

Journal:

Procedia Economics and Finance

Year:

2014

Language:

english

File:

PDF, 284 KB

english, 2014

42

Control of Epitaxial Growth of SiGe

van Roijen, Raymond, Steigerwalt, Michael, Bell, Josh D., Harley, Eric, Herbert, Alyssa, Fayaz, Mohammed Fazil, Brodfuehrer, Michael, Mocuta, Anda, Snavely, Colleen

Journal:

IEEE Transactions on Semiconductor Manufacturing

Year:

2015

Language:

english

File:

PDF, 974 KB

english, 2015

43

Show me your yttrium, and I will tell you who you are: implications for fossil imaging

Gueriau, Pierre, Jauvion, Clément, Mocuta, Cristian, Rahman, Imran

Journal:

Year:

2018

Language:

english

File:

PDF, 4.98 MB

english, 2018

44

RC Benefits of Advanced Metallization Options

Ciofi, Ivan, Roussel, Philippe J., Baert, Rogier, Contino, Antonino, Gupta, Anshul, Croes, Kristof, Wilson, Christopher J., Mocuta, Dan, Tokei, Zsolt

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.42 MB

english, 2019

45

Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature Phosphorus extension ion implantation

Kikuchi, Yoshiaki, Hopf, Toby, Mannaert, Geert, Everaert, Jean-Luc, Kubicek, Stefan, Eyben, Pierre, Waite, Andrew, del Agua Borniquel, Jose Ignacio, Variam, Naushad, Mocuta, Dan, Horiguchi, Naoto

Journal:

Solid-State Electronics

Year:

2019

Language:

english

File:

PDF, 4.05 MB

english, 2019

46

Trace Elemental Imaging of Rare Earth Elements Discriminates Tissues at Microscale in Flat Fossils

Gueriau, Pierre, Mocuta, Cristian, Dutheil, Didier B., Cohen, Serge X., Thiaudière, Dominique, Charbonnier, Sylvain, Clément, Gaël, Bertrand, Loïc, Rozhkova, Elena A.

Journal:

Year:

2014

Language:

english

File:

PDF, 10.28 MB

english, 2014

47

[IEEE 2015 International Conference on IC Design & Technology (ICICDT) - Leuven, Belgium (2015.6.1-2015.6.3)] 2015 International Conference on IC Design & Technology (ICICDT) - FinFET stressor efficiency on alternative wafer and channel orientations for the 14 nm node and below

Eneman, G., De Keersgieter, A., Mocuta, A., Collaert, N., Thean, A.

Year:

2015

Language:

english

File:

PDF, 546 KB

english, 2015

48

Surface functionalisation of sol–gel derived aluminosilicates in simulated body fluids

V. Simon, S. Cavalu, S. Simon, H. Mocuta, E. Vanea, M. Prinz, M. Neumann

Journal:

Solid State Ionics

Year:

2009

Language:

english

File:

PDF, 478 KB

english, 2009

49

[IEEE International Electron Devices Meeting. Technical Digest. IEDM - San Francisco, CA, USA (10-13 Dec. 2000)] International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - Reliability issues for silicon-on-insulator

Bolam, R., Shahidi, G., Assaderaghi, F., Khare, M., Mocuta, A., Hook, T., Wu, E., Leobandung, E., Voldman, S., Badami, D.

Year:

2000

Language:

english

File:

PDF, 350 KB

english, 2000

50

Structure and growth of metal on NiO(111) single crystal interfaces

Journal:

Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 553 KB

english, 2004

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